ⅲ-ⅴ compound semiconductors, such as Gallium arsenide ( GaAs), Indium phosphide ( InP) and their doped materials, are suitable to make high speed and high power PCSS with picosecond ( ps) time response. 利用Ⅲ-Ⅴ族化合物半导体材料砷化镓(GaAs)和磷化铟(InP)及其掺杂材料制作的光导开关具有很好的时间响应及高功率输出特性。
Yellow light-emitting diode of gallium arsenide phosphide 磷砷化镓黄色发光二极管